50 nm vertical replacement-gate (VRG) nMOSFETs with ALD …

We have integrated HfO/sub 2/ and Al/sub 2/O/sub 3/ gate dielectrics grown by atomic layer chemical vapor deposition (ALD) with poly-Si gate electrodes in the vertical replacement-gate (VRG) MOSFET geometry. These transistors are among the first reported with ALD HfO/sub 2/ gate dielectrics, and have HfO/sub 2/ target equivalent oxide …

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(PDF) 50 nm vertical replacement-gate (VRG) nMOSFETs

AZ, USA. Abstract. We have integrated HfO2 and A1203 gate dielectrics grown by. atomic !ayer chemical vapor deposition (ALD) with poly-Si. gate electrodes in the vertical replacement-gate (VRG ...

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Simulation of 100 nm Vertical Replacement Gate (VRG) …

The VRG VMOST with channel doping carrier concentration of 3.5×10 18 cm −3 and the width of the body region between the two channel lengths of 200 nm resulted in a threshold voltage (V th) of 0.90 V, an off‐state leakage current (I off) of 6.71×10 −15 A /μ m, a subthreshold slope (S) of 95.84 mV/dec, and a drain current (I D) of 200 ...

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50 nm vertical replacement-gate (VRG) pMOSFETs

Abstract. We present the first p-channel Vertical Replacement-Gate (VRG) MOSFETs. Like the VRG-nMOSFETs demonstrated last year (1), these devices show promise as a successor to planar MOSFETs for highly-scaled ULSI. Our pMOSFETs retain the key features of the nMOSFETs and add channel doping by ion implantation and raised …

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80m short verticals

INTRODUCTION. This page is a collection of short vertical antennas that I built over the years, for the 80 mtr band. With "short" I mean between 3 and 10% of λ. That is a lot shorter than a standard 1/4 λ vertical. Anything less than 75% of full-size is actually a real compromise.

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nm Vertical Replacement-Gate (VRG) nMOSFETs with …

50 nm Vertical Replacement-Gate (VRG) nMOSFETs with ALD HfO2 and A1203 Gate Dielectrics ... As shown in Fig. 1, the high-k gate dielectrics Nere formed by first growing an ultrathin underlayer ...

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50 nm vertical replacement-gate (VRG) nMOSFETs with

Corpus ID: 108046277; 50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics @inproceedings{Hergenrother200150NV, title={50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics}, author={John Michael Hergenrother and Glen David Wilk and Tanya Nigam and Fred P. …

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The vertical replacement-gate (VRG) MOSFET | Request …

The unified number-mobility fluctuation model was used to account for the observed 1/f noise and to extract the oxide trap density, which ranged from 1.8/spl times/10/sup 17/ cm/sup -3/eV/sup -1 ...

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Dedicated 80m Vertical | M0MCX

Here's the resonant coil adjustment chart for the vertical coil: 68 turns: 3.456 Mhz. 67 turns: 3.470 Mhz. 63 turns: 3.535 Mhz. 59 turns: 3.600 Mhz. 55 turns: 3.690 Mhz (1:1 SWR dead) 54 turns: 3.691 Mhz (I tightened up the radials which had an adverse effect so that the resonant frequency hardly moved)

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50 nm vertical replacement-gate (VRG) nMOSFETs with ALD …

We have integrate HfO 2 and Al 2 O 3 gate dielectrics grown by atomic layer chemical vapor deposition (ALD) with poly-Si gate electrodes in the vertical replacement-gate (VRG) MOSFET geometry (1,2). The transistors are among the first reported with ALD HfO 2 gate dielectrics, and have HfO 2 target equivalent oxide thickness (tEOTs) down to 13 Å. The …

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